IXFA130N10T2
IXFP130N10T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXFA) Outline
g fs
C iss
C oss
C rss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
45
68
6600
640
133
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
16
38
24
25
ns
ns
ns
ns
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-220
130
35
42
0.50
nC
nC
nC
0.42 ° C/W
° C/W
Dim.
A
b
b2
c
c2
D
D1
E
Millimeter
Min. Max.
4.06 4.83
0.51 0.99
1.14 1.40
0.40 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65
10.41
Inches
Min. Max.
.160 .190
.020 .039
.045 .055
.016 .029
.045 .055
.340 .380
.280 .320
.380
.405
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100
.575
.090
.040
.050
.320
BSC
.625
.110
.055
.070
I S
V GS = 0V
130
A
L4
0
0.13
0
.005
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = 65A, V GS = 0V, Note 1
520
1.3
A
V
TO-220 (IXFP) Outline
t rr
I RM
Q RM
I F = 65A, V GS = 0V
-di/dt = 100A/ μ s
V R = 50V
4.8
156
100
ns
A
nC
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
IXFA130N10T MOSFET N-CH 100V 130A D2PAK
IXFA16N50P MOSFET N-CH 500V 16A D2-PAK
IXFA230N075T2-7 MOSFET N-CH 75V 230A TO-263-7
IXFA230N075T2 MOSFET N-CH 75V 230A TO-263AA
IXFA3N120 MOSFET N-CH 1200V 3A TO-263
IXFA3N80 MOSFET N-CH 800V 3.6A TO-263
IXFA4N100P MOSFET N-CH 1000V 4A D2PAK
IXFA4N100Q-TRL MOSFET N-CH 1000V 4A TO-263
相关代理商/技术参数
IXFA14N60P 功能描述:MOSFET 600V 14A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA14N60P3 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P 功能描述:MOSFET 500V 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N60P3 制造商:IXYS Corporation 功能描述:MOSFET N-CH 600V 16A TO-263AA
IXFA180N10T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA20N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA230N075T2 功能描述:MOSFET TrenchT2 HiperFETs Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube